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10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 1 maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit boost switch maximum junction temperature t jmax 175 c 20 v total power dissipation p tot t j = t jmax t s = 80 c 97 w gate-emitter voltage v ges repetitive peak collector current i crm t p limited by t jmax 225 a a collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 57 flow boost 0 symmetric 650 v / 75 a high efficiency symmetric boost ultra high switching frequency clip-in pcb mounting low inductance layout solar inverters ups power supplies 10-FZ07NBA075SM-P916L58 flow 0 12mm housing schematic features target applications types
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 2 maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit boost diode boost inverse diode module properties maximum junction temperature t jmax 175 c total power dissipation p tot t j = t jmax t s = 80c 78 w repetitive peak forward current i frm 150 a continuous (direct) forward current i f t j = t jmax t s = 80c 59 a peak repetitive reverse voltage v rrm 650 v v i sol dc voltage t p = 2 s 4000 v min. 12,7 mm 9,53 mm cti > 200 operation temperature under switching condition storage temperature thermal properties comparative tracking index clearance creepage distance isolation voltage isolation properties c c t stg -40+125 t jop -40+( t jmax - 25) maximum junction temperature t jmax 175 c total power dissipation p tot t j = t jmax t s = 80c 61 w repetitive peak forward current i frm 60 a continuous (direct) forward current i f t j = t jmax t s = 80c 36 a peak repetitive reverse voltage v rrm 650 v
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 3 characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v gs [v] v r [v] i c [a] i d [a] i f [a] t j [c] min typ max boost switch 25 1,67 2,22 125 1,84 150 1,89 4,7 25 25 40 120 static v collec tor-emitter saturation voltage v cesat 15 75 v gate-emitter threshold voltage v ge(th) v ge = v ce 0,00075 25 3,3 4 a gate-emitter leakage c urrent i ges 20 0 na collec tor-emitter c ut-off current i ces 0 650 75 none ? input capacitance c ies f = 1 mhz 0 25 internal gate resistance r g 75 25 166 nc reverse transfer capac itance c res 16 gate c harge q g 15 520 25 4300 pf output capacitance c oes 0,98 k/w thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? = 3,4 w /mk 25 23 125 23 150 23 25 14 125 15 150 16 25 116 125 131 150 135 25 4 125 8 150 10 q rfwd = 2,4 c 25 1,058 q rfwd = 4,6 c 125 1,486 q rfwd = 5,3 c 150 1,591 25 0,277 125 0,481 150 0,527 mws turn-off energy (per pulse) e off 75 ns 350 igbt switching t d(off) fall time t f turn-on energy (per pulse) e on rise time t r r gon = 4 ? turn-off delay time turn-on delay time t d(on) r goff = 4 ? 15/0
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 4 characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v gs [v] v r [v] i c [a] i d [a] i f [a] t j [c] min typ max boost diode boost inverse diode 25 1,53 1,77 125 1,49 150 1,47 25 3,8 1,23 k/w thermal resistance junc tion to sink r th(j-s) phase-change material ? = 3,4 w /mk thermal v reverse leakage c urrent i r 650 a forward voltage v f 75 static 25 51 125 69 150 74 25 84 125 109 150 123 d i /d t = 5120 a/s 25 2,383 d i /d t = 4804 a/s 125 4,616 d i /d t = 5399 a/s 150 5,343 25 0,511 125 1,036 150 1,222 25 750 125 682 150 570 fwd switching peak recovery current i rrm 15/0 350 75 a reverse recovery time t rr ns recovered charge q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s 25 1,64 1,87 150 1,56 25 0,36 static 30 v reverse leakage c urrent i r 650 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? = 3,4 w /mk k/w 1,56
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 5 characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v gs [v] v r [v] i c [a] i d [a] i f [a] t j [c] min typ max thermistor i vincotech ntc reference power dissipation constant power dissipation p b-value b (25/100) tol. 1% b-value b (25/50) tol. 1% k 25 1,5 mw/k 25 3962 25 4000 k 25 22 k? 5 % 5 100 -5 25 mw rated resistance r deviation of r100 r/r r 100 = 1484 ?
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 6 boost switch characteristics typical output characteristics igbt typical output characteristics igbt i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v t j : 125 c t j = 150 c 150 c v ge from 8 v to 17 v in steps of 1 v typical transfer characteristics igbt transient thermal impedance as function of puls e duration igbt i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v t j : 125 c r th(j-s) = 0,98 k/w 150 c r (k/w) (s) 7,21e-02 2,25e+00 1,46e-01 3,32e-01 4,74e-01 6,42e-02 1,76e-01 1,63e-02 6,17e-02 3,99e-03 4,63e-02 3,57e-04 igbt thermal model values 0 15 30 45 60 75 0 1 2 3 4 5 6 7 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 50 100 150 200 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 50 100 150 200 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 7 boost switch characteristics gate voltage vs gate charge igbt safe operating area igbt v ge = f( q g ) i c = f( v ce ) at at i c = 75 a d = single pulse t h = 80 oc v ge = 15 v t j = t jmax oc 130v 520v 0 2,5 5 7,5 10 12,5 15 0 20 40 60 80 100 120 140 160 180 v v v v g e g e g e g e (v) q qq q g gg g (nc) 0,01 0,1 1 10 100 1000 1 10 100 1000 i i i i c cc c (a) v vv v c e c ec e c e (v)
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 8 boost diode characteristics typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 1,23 k/w 150 c fwd thermal model values r (k/w) (s) 8,04e-02 2,68e+00 1,74e-01 2,85e-01 6,28e-01 6,23e-02 2,05e-01 1,65e-02 8,90e-02 4,15e-03 4,76e-02 4,96e-04 0 50 100 150 200 250 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 9 thermistor characteristics boost inverse diode characteristics thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r (?) t (c) ntc-typical temperature characteristic typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t 150 c r th(j-s) = 1,56 k/w fwd thermal model values r (k/w) (s) 9,10e-02 2,00e+00 3,45e-01 1,68e-01 7,17e-01 4,13e-02 2,97e-01 7,43e-03 1,15e-01 1,80e-03 t j : 0 15 30 45 60 75 90 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 10 figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f(r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15/0 v 150 c v ge = 15/0 v 150 c r gon = 4 ? i c = 75 a r goff = 4 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15/0 v 150 c v ge = 15/0 v 150 c r gon = 4 ? i c = 75 a e rec e rec e rec 0 0,5 1 1,5 2 0 25 50 75 100 125 150 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec e rec 0 0,4 0,8 1,2 1,6 0 2 4 6 8 10 12 14 16 18 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e on e ee e o ff o ff o ff o ff e off e off 0 0,5 1 1,5 2 2,5 3 0 25 50 75 100 125 150 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e off e on e o n o n o n o n e off e on e o ff o ffo ff o ff 0 0,5 1 1,5 2 2,5 3 0 2 4 6 8 10 12 14 16 18 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) boost switching characteristics
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 11 figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 150 c t j = 150 c v ce = 350 v v ce = 350 v v ge = 15/0 v v ge = 15/0 v r gon = 4 ? i c = 75 a r goff = 4 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15/0 v t j : 125 c v ge = 15/0 v t j : 125 c r gon = 4 ? 150 c i c = 75 a 150 c t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 25 50 75 100 125 150 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 2 4 6 8 10 12 14 16 18 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr t rr 0 0,04 0,08 0,12 0,16 0 2 4 6 8 10 12 14 16 18 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr t rr 0 0,04 0,08 0,12 0,16 0 25 50 75 100 125 150 t t t t r r r r r r r r ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a) boost switching characteristics
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 12 figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15/0 v t j : 125 c v ge = 15/0 v t j : 125 c r gon = 4 ? 150 c i c = 75 a 150 c figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15/0 v t j : 125 c v ge = 15/0 v t j : 125 c r gon = 4 ? 150 c i c = 75 a 150 c i rm i rm i rm 0 30 60 90 120 0 2 4 6 8 10 12 14 16 18 i i i i r m r m r m r m (a) (a) (a) (a) r rr r g o n g o n g o n g o n ( (( ( ) )) ) q qq q r r r r q r q r 0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i ii i rm rmrm rm i rm i rm 0 20 40 60 80 100 0 25 50 75 100 125 150 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r q r 0 2 4 6 8 0 25 50 75 100 125 150 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a) boost switching characteristics
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 13 figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unction of igbt t urn on gat e resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15/0 v t j : 125 c v ge = 15/0 v t j : 125 c r gon = 4 ? 150 c i c = 75 a 150 c 0 1500 3000 4500 6000 7500 0 2 4 6 8 10 12 14 16 18 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 1000 2000 3000 4000 5000 6000 0 25 50 75 100 125 150 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t boost switching characteristics figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 4 ? r goff = 4 ? 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c m odule m odule m odule m odule i i i i c cc c chip chip chip chip
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 14 boost switching definitions t j 125 c r gon 4 ? r goff 4 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of t dof f , t eof f (t eof f = int egrat ing t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of tdon, t eon (t eon = int egrating t ime f or eon) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 75 a i c (100%) = 75 a t doff = 0,131 s t don = 0,023 s t eoff = 0,179 s t eon = 0,124 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of t f turn-on swit ching wavef orms & def init ion of tr v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 75 a i c (100%) = 75 a t f = 0,008 s t r = 0,015 s = = general conditions = i c 1% v ce 90% v ge 90% -50 0 50 100 150 -0,1 -0,05 0 0,05 0,1 0,15 0,2 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 2,96 3 3,04 3,08 3,12 3,16 3,2 3,24 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 0,05 0,07 0,09 0,11 0,13 0,15 % t tt t ( s) ( s)( s) ( s) v ce i c t f i c 10% i c 90% -25 0 25 50 75 100 125 150 175 200 3,01 3,03 3,05 3,07 3,09 3,11 3,13 3,15 % t tt t (s) (s)(s) (s) t r v ce i c
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 15 boost switching definitions figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 26,34 kw p on (100%) = 26,34 kw e off (100%) = 0,48 mj e on (100%) = 1,49 mj t eoff = 0,18 s t eon = 0,12 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v d (100%) = 350 v i d (100%) = 75 a i rrm (100%) = -69 a t rr = 0,109 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,06 -0,01 0,04 0,09 0,14 0,19 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 150 2,97 3,01 3,05 3,09 3,13 3,17 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3 3,02 3,04 3,06 3,08 3,1 3,12 3,14 3,16 3,18 % t tt t (s) (s)(s) (s) i d v d fitted
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 16 boost switching definitions figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 75 a p rec (100%) = 26,34 kw q rr (100%) = 4,62 c e rec (100%) = 1,04 mj t qrr = 0,22 s t erec = 0,22 s t qrr -100 -50 0 50 100 150 3 3,05 3,1 3,15 3,2 3,25 3,3 % t tt t (s) (s)(s) (s) i d q rr -25 0 25 50 75 100 125 3 3,05 3,1 3,15 3,2 3,25 3,3 % t tt t (s) (s)(s) (s) p rec e rec t erec
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 17 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 33,6 0 g1 2 30,6 0 s1 3 23,65 0 +gnd 4 20,65 0 +gnd 5 14,9 0 +dc 6 11,9 0 +dc 7 8 9 0 7,8 +boost 10 3 7,8 +boost 11 0 14,8 -boost 12 3 14,8 -boost 13 14 15 11,9 22,6 -dc 16 14,9 22,6 -dc 17 20,65 22,6 -gnd 18 23,65 22,6 -gnd 19 30,6 22,6 s2 20 33,6 22,6 g2 21 33,6 14,55 ntc1 22 33,6 8,05 ntc2 not assembled not assembled not assembled not assembled pin table name nn-nnnnnnnnnnnnnn-ttttttvv outline text datamatrix version without thermal paste 12mm housing with solder pins ordering code 10-FZ07NBA075SM-P916L58 ordering code & marking nn-nnnnnnnnnnnnnn ttttttvv wwyy ul vinco lllll ssss
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 18 boost inverse diode thermistor ntc id t igbt fwd component d5,d6 fwd t1,t2 d1,d2 650 v 30 a boost diode pinout identification comment 650 v 650 v voltage current function 75 a boost switch 75 a
10-FZ07NBA075SM-P916L58 datasheet copyright vincotech 22 feb. 2016 / revision 1 19 disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. standard packaging quantity (spq) sample handling instruction 135 >spq standard 10-FZ07NBA075SM-P916L58-d1-14 22 feb. 2016 document no.: date: modification:

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